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Global power discrete market revenues forecast to be driven by the emerging demand for SiC and GaN power semiconductors
Global Power Discrete Market 2014-2018 - a new market research report on 2014-04-11 22:29:05
The emerging market for SiC and GaN power semiconductors is expected to drive the Global Power Discrete market during the forecast period. SiC power semiconductors comprise SiC MOSFET, SiC JFET, SiC BJT, and SiC Schottky diodes. Currently, SiC is widely used in the development of power semiconductors; however, GaN is a wide bandgap material that offers similar performance benefits to SiC but has greater cost-reduction potential, and the market for GaN power semiconductors is expected to grow rapidly in the coming years. In addition, GaN can be made available using existing silicon substrates, which can enable mass production and reduced cost. Power semiconductors using next-generation materials such as SiC and GaN are characterized to have lower energy loss, high-speed switching, and higher heat resistance than conventionally-used silicon. The adoption of SiC and GaN power semiconductors is expected to witness a significant increase, particularly in the EV/HEV and Industrial Motor Drive segments.
The growth of the Global Power Discrete market is driven by several factors, including the high demand for discrete IGBTs. Discrete IGBTs enable increased efficiency in electronic devices ranging from consumer electronics to several high power electronic applications. They play a major role in the technological advancement of power electronics.
Further, the demand for power discrete semiconductors is dependent on the growth of various customer segments including the EV/HEV, Renewable Energy, Industrial Motor Drive, and LED Lighting segments. In recent years, the Industrial Motor Drive segment has been witnessing a slowdown because of several factors such as the sluggish economic recovery in the US, the natural disasters occurring in Japan, and the Eurozone debt crisis.
The key players operating in the global power discrete market include Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corp., STMicroelectronics N.V., and Toshiba Corp.
The global power discrete market is forecast to grow at a CAGR of 8.43 percent over the period 2013-2018. One of the key factors contributing to this market growth is the high demand for discrete IGBTs. The Global Power Discrete market has also been witnessing the emerging market for SiC and GaN power semiconductors. However, the low demand due to global economic slowdown could pose a challenge to the growth of this market.
Other vendors operating in the market are Fuji Electric Co. Ltd., International Rectifier, ON Semiconductor Corp., Renesas Electronics Corp., and Vishay Intertechnology Inc.
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